********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Apr 14, 2014
*ECN S14-0794, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si8851EDB D G S 
x1  D G S Si8851EDB_mos
x2  G S   Si8851EDB_esd
.ENDS Si8851EDB
.SUBCKT Si8851EDB_mos D G S 
M1 3 GX S S PMOS W= 6275000u L= 0.25u 
M2 S GX S D NMOS W= 6275000u L= 0.45u
R1 D 3 3.12e-03 -8.041e-05 6.855e-08 
CGS GX S 3.078e-09 
CGD GX D 3.097e-10 
RG G GY 2.3
RTCV 100 S 1e6 3.195e-04 5.703e-08 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 6275000u 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 2e-8 
+ RS = 0 KP = 3.916e-06 NSUB = 3.93e+14 
+ KAPPA = 7.101e-06 NFS = 1.000e+12 
+ LD = 0 IS = 0 TPG = -1 CAPOP = 12 ) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 2e-8 
+NSUB = 3.131e+16 IS = 0 TPG = -1 CAPOP = 12 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.508e-07 TREF = 25 BV = 21 
+RS = 1.90e-02 N = 1.884e+00 IS = 1.000e-06 
+EG = 1.102e+00 XTI = -5.950e+00 TRS = 1.295e-04 
+CJO = 2.000e-11 VJ = 3.000e-01 M = 1.000e+00 )    
.ENDS  Si8851EDB_mos
.subckt Si8851EDB_esd 1 2 
r1 1 9 5.000e+04 -4.194e-02 
d1 2 9 dleak 
.MODEL dleak d (IS = 3.000e-10 XTI = 3.957e+02 EG = 1.17 
+ TREF = 25 TCV = 0 N = 3.800e+01 BV = 50) 
r2 1 10 0.733e+01 -1.301e-03 
d3 11 10 dout 
d4 11 2 dout 
.MODEL dout D (IS = 1.573e-08 XTI = -3.008e+01 EG = 1.17 
+ TREF = 25 TCV = 0.74138e-03 N = 3.879e+00 BV = 1.152e+01 
+ TLEV = 1) 
.ends Si8851EDB_esd 
